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參數(shù)資料
| 型號： | M5M4V4405CTP-7S |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM |
| 中文描述： | 江戶（超頁模式）4194304位（1048576 - Word的4位）動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 9/27頁 |
| 文件大?。?/td> | 293K |
| 代理商： | M5M4V4405CTP-7S |
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EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CJ,TP-6,-7,-6S,-7S
MITSUBISHI LSIs
Parameter
Symbol
Limits
Unit
Min
10
10
Max
Min
10
15
Max
9
t
WHR
t
WSR
Test Mode Set Cycle
M5M4V4405C-6,-6S
M5M4V4405C-7,-7S
ns
ns
Hyper page Mode Cycle
(Read, Early Write, Read-Write, Read-Modify-Write Cycle, Read Write Mix Cycle, Hi-Z control by
M5M4V4405C-6,-6S
Min
M5M4V4405C-7,-7S
Min
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(Note 26)
(Note 27)
t
HPC
t
HPRWC
t
RAS
t
CPRH
t
CPWD
t
HCWD
t
HAWD
t
HPWD
t
HCOD
t
HAOD
t
HPOD
(Note 24)
38
55
37
52
55
20
35
38
30
71
82
100000
43
65
47
62
65
25
40
43
35
84
97
100000
Parameter
Symbol
Limits
Unit
Max
Max
Hyper page mode read/write cycle time
Hyper Page Mode read write / read modify write cycle time
RAS low pulse width for read or write cycle
RAS hold time after CAS precharge
Delay time, CAS precharge to W low
Delay time, CAS low to W low after read
Delay time, Address to W low after read
Delay time, CAS precharge to W low after read
Delay time, CAS low to OE high after read
Delay time, Address to OE high after read
Delay time, CAS precharge to OE high after read
Write setup time before RAS low
Write hold time after RAS low
OE or W)
(Note 25)
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