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參數(shù)資料
| 型號(hào)： | M59MR032C120ZC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 18/49頁 |
| 文件大?。?/td> | 352K |
| 代理商： | M59MR032C120ZC6T |
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M59MR032C, M59MR032D
Table 23. Primary Algorithm-Specific Extended Query Table
Offset
Data
Description
(P)h = 39h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
0052h
0049h
(P+3)h = 3Ch
0031h
Major version number, ASCII
(P+4)h = 3Dh
0030h
Minor version number, ASCII
(P+5)h = 3Eh
00F2h
Extended Query table contents for Primary Algorithm
bit 10-31
Reserved; undefined bits are ‘0’. If bit 31 is ’1’ then another 31 bit
field of optional features follows at the end of the bit-30 field.
bit 0
Chip Erase supported
(1 = Yes, 0 = No)
bit 1
Suspend Erase supported
(1 = Yes, 0 = No)
bit 2
Suspend Program supported
(1 = Yes, 0 = No)
bit 3
Legacy Lock/Unlock supported
(1 = Yes, 0 = No)
bit 4
Queued Erase supported
(1 = Yes, 0 = No)
bit 5
Instant individual block locking supported
(1 = Yes, 0 = No)
bit 6
Protection bits supported
(1 = Yes, 0 = No)
bit 7
Page-mode read supported
(1 = Yes, 0 = No)
bit 8
Synchronous read supported
(1 = Yes, 0 = No)
bit 9
Simultaneous operation supported
(1 = Yes, 0 = No)
0003h
(P+7)h
0000h
(P+8)h
0000h
(P+9)h = 42h
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query
bit 0
Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1
Reserved; undefined bits are ‘0’
(P+A)h = 43h
0003h
Block Protect Status
Defines which bits in the Block Protect Status Register section of the Query are
implemented.
bit 0
Block Protect Status Register Protect/Unprotect bit active (1 = Yes,
0 = No)
bit 1
Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2 Reserved for future use; undefined bits are ‘0’
(P+B)h
0000h
(P+C)h = 45h
0018h
VDD Logic Supply Optimum Program/Erase voltage (highest performance)
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
(P+D)h = 46h
00C0h
VPP Supply Optimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
(P+E)h = 47h
0000h
Reserved
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59MR032CGC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D100GC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D100ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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