參數(shù)資料
型號(hào): M59MR032C100ZC6T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 32兆位的2Mb x16插槽,復(fù)用的I / O,雙行,突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù): 29/49頁(yè)
文件大小: 352K
代理商: M59MR032C100ZC6T
35/49
M59MR032C, M59MR032D
Table 31. Write AC Characteristics, Write Enable Controlled
(TA = –40 to 85 °C; VDD = VDDQ = 1.65V to 2.0V)
Symbol
Alt
Parameter
M59MR032
Unit
100
120
Min
Max
Min
Max
tAVAV
tWC
Address Valid to Next Address Valid
100
120
ns
tAVLH
Address Valid to Latch Enable High
10
ns
tDVWH
tDS
Input Valid to Write Enable High
50
ns
tELLH
Chip Enable Low to Latch Enable High
10
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
0
ns
tGHLL
Output Enable High to Latch Enable Low
20
ns
tGHWL
Output Enable High to Write Enable Low
20
ns
tLHAX
Latch Enable High to Address Transition
10
ns
tLHWH
Latch Enable High to Write Enable High
10
ns
tLLLH
Latch Enable Pulse Width
10
ns
tPLQ7V
RP Low to Reset Complete During
Program/Erase
15
s
tVDHEL
tVCS
VDD High to Chip Enable Low
50
s
tVPPHWH
VPP High to Write Enable High
200
ns
tWHDX
tDH
Write Enable High to Input Transition
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
0
ns
tWHGL
tOEH
Write Enable High to Output Enable Low
0
ns
tWHLL
Write Enable High to Latch Enable Low
0
ns
tWHVPPL
Write Enable High to VPP Low
200
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
30
ns
tWHWPL
Write Enable High to Write Protect Low
200
ns
tWLWH
tWP
Write Enable Low to Write Enable High
50
ns
tWPHWH
Write Protect High to Write Enable High
200
ns
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M59MR032CGC 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
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