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參數(shù)資料
| 型號： | M59MR032C100ZC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 17/49頁 |
| 文件大?。?/td> | 352K |
| 代理商： | M59MR032C100ZC6T |
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M59MR032C, M59MR032D
24/49
Table 22. Device Geometry Definition
Offset Word
Mode
Data
Description
27h
0016h
Device Size = 2n in number of bytes
28h
0001h
Flash Device Interface Code description: Asynchronous x16
29h
0000h
2Ah
0000h
Maximum number of bytes in multi-byte program or page = 2n
2Bh
0000h
2Ch
0003h
Number of Erase Block Regions within device
bit 7 to 0 = x = number of Erase Block Regions
Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."
2. x specifies the number of regions within the device containing one or more
contiguous Erase Blocks of the same size.
For example, a 128KB device
(1Mb) having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is
considered to have 5 Erase Block Regions.
Even though two regions both
contain 16KB blocks, the fact that they are not contiguous means they are sep-
arate Erase Block Regions.
3. By definition, symmetrically block devices have only one blocking region.
M59MR032C
Erase Block Region Information
bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes in
size. The value z = 0 is used for 128 byte block size.
e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K
bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase
Block Region:
e.g.
y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]
y = 0 means no blocking (# blocks = y+1 = "1 block")
Note: y = 0 value must be used with number of block regions of one as indicated
by (x) = 0
2Dh
002Fh
2Eh
0000h
2Fh
0000h
30h
0001h
31h
000Eh
32h
0000h
33h
0000h
34h
0001h
35h
0007h
36h
0000h
37h
0020h
38h
0000h
M59MR032D
2Dh
0007h
2Eh
0000h
2Fh
0020h
30h
0000h
31h
000Eh
32h
0000h
33h
0000h
34h
0001h
35h
002Fh
36h
0000h
37h
0000h
38h
0001h
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| M59MR032D100ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59MR032C120GC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032C120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032CGC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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