參數(shù)資料
型號: M59MR032C100ZC6T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 32兆位的2Mb x16插槽,復(fù)用的I / O,雙行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 20/49頁
文件大小: 352K
代理商: M59MR032C100ZC6T
27/49
M59MR032C, M59MR032D
Figure 7. AC Testing Load Circuit
AI90115
VDDQ / 2
OUT
CL = 30pF
CL includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Table 26. AC Measurement Conditions
Input Rise and Fall Times
≤ 4ns
Input Pulse Voltages
0 to VDDQ
Input and Output Timing Ref. Voltages
VDDQ/2
Figure 6. Testing Input/Output Waveforms
AI90114
VDDQ
0V
VDDQ/2
Table 27. Capacitance (1)
(TA = 25 °C, f = 1 MHz)
Note: 1. Sampled only, not 100% tested.
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN = 0V
6pF
COUT
Output Capacitance
VOUT = 0V
12
pF
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M59MR032C120ZC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032CGC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
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M59MR032D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory