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參數(shù)資料
| 型號(hào)： | M393B1K73CH0-YH9 |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 1G X 72 MULTI DEVICE DRAM MODULE, 0.255 ns, DMA240 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, DIMM-240 |
| 文件頁(yè)數(shù)： | 45/53頁(yè) |
| 文件大?。?/td> | 1492K |
| 代理商： | M393B1K73CH0-YH9 |
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datasheet
DDR3L SDRAM
Rev. 1.01
Registered DIMM
1. DDR3L Registered DIMM Ordering Information
NOTE :
- "##" - F8/H9/K0
- F8(1066Mbps 7-7-7) / H9(1333Mbps 9-9-9)
2. Key Features
JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) Power Supply
VDDQ = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
400MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 6,7,8,9
Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 5(DDR3-800), 6(DDR3-1066) and 7(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
write [either On the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C
Asynchronous Reset
3. Address Configuration
Part Number
Density
Organization
Component Composition
Number of
Rank
Height
M393B5773CH0-YF8/H9
2GB
256Mx72
256Mx8(K4B2G0846C-HY##)*9
1
30mm
M393B5273CH0-YF8/H9
4GB
512Mx72
256Mx8(K4B2G0846C-HY##)*18
2
30mm
M393B5270CH0-YF8/H9
4GB
512Mx72
512Mx4(K4B2G0446C-HY##)*18
1
30mm
M393B1K70CH0-YF8/H9
8GB
1Gx72
512Mx4(K4B2G0446C-HY##)*36
2
30mm
M393B1K73CH0-YF8/H9
8GB
1Gx72
256Mx8(K4B2G0846C-HY##)*36
4
30mm
M393B2K70CM0-YF8/H9
16GB
2Gx72
DDP 1Gx4(K4B4G0446C-MY##)*36
4
30mm
Speed
DDR3-800
DDR3-1066
DDR3-1333
Unit
6-6-6
7-7-7
9-9-9
tCK(min)
2.5
1.875
1.5
ns
CAS Latency
6
7
9nCK
tRCD(min)
15
13.125
13.5
ns
tRP(min)
15
13.125
13.5
ns
tRAS(min)
37.5
36
ns
tRC(min)
52.5
50.625
49.5
ns
Organization
Row Address
Column Address
Bank Address
Auto Precharge
512Mx4(2Gb) based Module
A0-A14
A0-A9, A11
BA0-BA2
A10/AP
256Mx8(2Gb) based Module
A0-A14
A0-A9
BA0-BA2
A10/AP
1Gx4(4Gb DDP) based Module
A0-A14
A0-A9, A11
BA0-BA2
A10/AP
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PDF描述 |
|---|---|
| M393B5273CH0-CK0 | 512M X 72 MULTI DEVICE DRAM MODULE, 0.225 ns, DMA240 |
| M393B5773CH0-CK0 | 256M X 72 MULTI DEVICE DRAM MODULE, 0.225 ns, DMA240 |
| M3950/1529A012 | TOGGLE SWITCH, 3PDT, LATCHED, 4A, 28VDC, THROUGH HOLE-STRAIGHT |
| M83731/2327D110 | TOGGLE SWITCH, 3PDT, MOMENTARY, 4A, 28VDC, THROUGH HOLE-STRAIGHT |
| M3950/1726A110 | TOGGLE SWITCH, 3PDT, LATCHED, 4A, 28VDC, THROUGH HOLE-STRAIGHT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M393B1K73EB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:240pin Registered DIMM based on 2Gb E-die |
| M393B273DH0-CH9E8 | 制造商:Samsung Semiconductor 功能描述:4GB 2RX8 PC3-8500R-07-00-B0-D1 - Trays |
| M393B2873EH1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR3 SDRAM Memory |
| M393B2873EH1-CF8 | 制造商:ATP Electronics Inc 功能描述:M393B2873EH1-CF8 - Bulk |
| M393B2873FH0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR3 SDRAM Memory |
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