參數(shù)資料
型號: M2V64S3DTP-6
廠商: Mitsubishi Electric Corporation
英文描述: 64M Synchronous DRAM
中文描述: 6400同步DRAM
文件頁數(shù): 32/51頁
文件大?。?/td> 430K
代理商: M2V64S3DTP-6
Feb.'00
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.3.2)
64M Synchronous DRAM
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x 4-BIT)
(4-BANK x 2,097,152-WORD x 8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
32
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~ 70'C, Vdd = VddQ = 3.3 ± 0.3V, Vss = VssQ = 0V, Output Open, unless otherwise noted)
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70'C, Vdd = VddQ = 3.3 ± 0.3V, Vss = VssQ = 0V, unless otherwise noted)
Symbol
Parameter
Test Conditions
Limits
Min.
Max.
Unit
VOH(DC)
VOL(DC)
IOZ
I
I
High-Level Output Voltage (DC)
Low-Level Output Voltage (DC)
Off-state Output Current
Input Current
IOH=-2mA
IOL= 2mA
Q floating Vo=0 ~ VddQ
VIH=0 ~ VddQ+0.3V
2.4
0.4
V
V
μA
μA
-5
-5
5
5
NOTE)
1. Icc(max) is specified at the output open condition.
2.
Input signals are changed one time during 30ns.
Symbol
ITEM
Limits (max.)
Unit
-8
Icc1
operating current
tRC=min, tCLK =min,
BL=1 , CL=3
mA
Icc2N
tCLK = 15ns
CKE = H
VIH > Vcc - 0.2V
VIL < 0.2V
CLK = L & CKE = H
VIH > Vcc - 0.2V
VIL < 0.2V
all input signals are fixed.
Icc2P
mA
Icc4
All Bank Active
tCLK = min
BL=4, CL=3
-7
Organi-
zation
x4
x8
x16
single bank operation
20
20
x4/x8/x16
2
2
/CS > Vcc -0.2V
tCLK = 15ns
CKE = L
x4/x8/x16
x4
x16
mA
mA
mA
x8
-6
90
75
85
20
2
90
precharge standby
current in Non Power
down mode
active standby current
burst current
Icc5
tRC=min, tCLK=min
mA
auto-refresh current
Icc2NS
x4/x8/x16
mA
15
15
15
Icc2PS
1
1
CLK = L
CKE = L
x4/x8/x16
mA
1
Icc6
self-refresh current
1
1
x4
/x8
/x16
mA
1
CKE < 0.2V
130
110
110
75
x4/x8/x16
Icc3NS
25
25
CKE = H, CLK=L
x4/x8/x16
25
Icc3N
30
30
CKE = H, tCLK=15ns
x4/x8/x16
30
mA
/CS > Vcc -0.2V
precharge standby
current in Power down
mode
70
80
70
70
80
70
70
80
70
70
80
70
100
0.5
0.5
0.5
6,7,8
6L,7L,8L
相關(guān)PDF資料
PDF描述
M2V64S3DTP-8 64M Synchronous DRAM
M2V64S4DTP-6 64M Synchronous DRAM
M2V64S4DTP-7 64M Synchronous DRAM
M2V64S4DTP-8 64M Synchronous DRAM
M30201M4-XXXFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2V64S3DTP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM
M2V64S3DTP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM
M2V64S40BTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
M2V64S40BTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
M2V64S40BTP-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM