參數(shù)資料
型號: M2V64S3DTP-6
廠商: Mitsubishi Electric Corporation
英文描述: 64M Synchronous DRAM
中文描述: 6400同步DRAM
文件頁數(shù): 26/51頁
文件大?。?/td> 430K
代理商: M2V64S3DTP-6
Feb.'00
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.3.2)
64M Synchronous DRAM
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x 4-BIT)
(4-BANK x 2,097,152-WORD x 8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
26
[ Read with Auto-Precharge Interrupted by Read to another Bank ]
Burst read with auto-precharge can be interrupted by read to
another
bank
. Next ACT comand can
be issued after (BL+tRP) from the READA. Auto-precharge interruption by a command to the same
bank is inhibited.
READA interrupted by READ to another bank (CL=2, BL=4)
CLK
Command
A0-9,11-12
A10
BA0-1
DQ
Read
Ya
1
00
Qa0
Qa1
Read
Yb
0
10
BL
tRP
ACT
Xa
Xa
00
interrupted
auto-precharge
activate
Qb0
Qb1
Qb2
Qb3
Full Page Burst
Full page burst length is available for only the sequential burst type. Full page burst read or write
is repeated untill a Precharge or a Burst Terminate command is issued. In case of the full page
burst, a read or write with auto-precharge command is illegal.
Single Write
When sigle write mode is set, burst length for write is always one, independently of Burst Length
defined by (A2-0).
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