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參數(shù)資料
| 型號： | M25PE40VMW6G |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件頁數(shù)： | 30/62頁 |
| 文件大?。?/td> | 565K |
| 代理商： | M25PE40VMW6G |
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Instructions
M25PE40
6.12
Page Erase (PE)
The Page Erase (PE) instruction sets to ‘1’ (FFh) all bits inside the chosen page. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Page Erase (PE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address bytes on Serial Data input (D). Any address inside the
page is a valid address for the Page Erase (PE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 18.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the Page Erase (PE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Page Erase cycle (whose duration is tPE) is initiated.
While the Page Erase cycle is in progress, the Status Register may be read to check the
value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-
timed Page Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Page Erase (PE) instruction applied to a page that is hardware protected is not executed.
Any Page Erase (PE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
Figure 18.
Page Erase (PE) instruction sequence
1.
Address bits A23 to A19 are Don’t care.
24-bit address
C
D
AI04046
S
2
1
3456789
29 30 31
Instruction
0
23 22
2
0
1
MSB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE40-VMW6G | 功能描述:閃存 4 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE40-VMW6G_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25PE40VMW6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMW6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE40VMW6TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
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