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參數(shù)資料
| 型號： | M25PE40VMW6G |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件頁數(shù)： | 29/62頁 |
| 文件大?。?/td> | 565K |
| 代理商： | M25PE40VMW6G |
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M25PE40
Instructions
35/62
6.11
Write to Lock Register (WRLR)
Note:
The Write to Lock Register (WRLR) instruction is decoded only in the M25PE40 in the T9HX
process (see Important note on page 6).
The Write to Lock Register (WRLR) instruction allows bits to be changed in the Lock
Registers. Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed. After the Write Enable (WREN) instruction has been decoded, the
device sets the Write Enable Latch (WEL).
The Write to Lock Register (WRLR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code, three address bytes (pointing to any address in the targeted
sector and one data byte on Serial Data input (D). The instruction sequence is shown in
Figure 17. Chip Select (S) must be driven High after the eighth bit of the data byte has been
latched in, otherwise the Write to Lock Register (WRLR) instruction is not executed.
Lock Register bits are volatile, and therefore do not require time to be written. When the
Write to Lock Register (WRLR) instruction has been successfully executed, the Write
Enable Latch (WEL) bit is reset after a delay time less than tSHSL minimum value.
Any Write to Lock Register (WRLR) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 17.
Write to Lock Register (WRLR) instruction sequence
Table 10.
Lock Register in(1)
1.
The table rows in gray are true for products processed in the T7X process only (see Important note on
Sector
Bit
Value
All sectors
b7-b2
‘0’
b1
Sector Lock Down bit value
b0
Sector Write Lock bit value
AI10784b
C
D
S
23
2
1
3456789 10
28 29 30 31 32 33 34 35
22 21
3210
36 37 38
Instruction
24-bit address
0
765432
0
1
Lock Register
value
39
MSB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE40-VMW6G | 功能描述:閃存 4 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE40-VMW6G_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25PE40VMW6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMW6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE40VMW6TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
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