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參數(shù)資料
| 型號(hào)： | M25PE40VMW6G |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件頁數(shù)： | 24/62頁 |
| 文件大?。?/td> | 565K |
| 代理商： | M25PE40VMW6G |
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Instructions
M25PE40
6.8
Read Lock Register (RDLR)
Note:
The Read Lock Register (RDLR) instruction is decoded only in the M25PE40 in the T9HX
process (see Important note on page 6).
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Lock Register (RDLR) instruction is followed by a 3-byte address (A23-A0) pointing to any
location inside the concerned sector (or subsector). Each address bit is latched-in during
the rising edge of Serial Clock (C). Then the value of the Lock Register is shifted out on
Serial Data output (Q), each bit being shifted out, at a maximum frequency fC, during the
falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 14.
The Read Lock Register (RDLR) instruction is terminated by driving Chip Select (S) High at
any time during data output.
Any Read Lock Register (RDLR) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 14.
Read Lock Register (RDLR) instruction sequence and data-out sequence
Table 9.
Lock Registers
Bit
Bit name
Value
Function
b7-b4
Reserved
b1
Sector Lock
Down
‘1’
The Write Lock and Lock Down bits cannot be changed. Once a
‘1’ is written to the Lock Down bit it cannot be cleared to ‘0’,
except by a reset or power-up.
‘0’
The Write Lock and Lock Down bits can be changed by writing
new values to them (default value).
b0
Sector Write
Lock
‘1’
Write, Program and Erase operations in this sector will not be
executed. The memory contents will not be changed.
‘0’
Write, Program and Erase operations in this sector are executed
and will modify the sector contents (default value).
C
D
AI10783
S
Q
23
2
1
3456789 10
28 29 30 31 32 33 34 35
22 21
3210
36 37 38
76543
1
0
High Impedance
Lock Register Out
Instruction
24-bit address
0
MSB
2
39
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE40-VMW6G | 功能描述:閃存 4 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE40-VMW6G_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25PE40VMW6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMW6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE40VMW6TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
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