參數(shù)資料
型號(hào)： KM416S4030B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1M x 16Bitx 4 Banks Synchronous DRAM(1M x 16位 x4組同步動(dòng)態(tài)RAM)
中文描述： 100萬(wàn)x 16Bitx 4銀行同步DRAM（100萬(wàn)× 16位x4組同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 22/43頁(yè)
文件大?。?/td> 625K
代理商： KM416S4030B
CMOS SDRAM
DEVICE OPERATIONS - III
ELECTRONICS
REV. 3 Feb. '98
*Note :
1. Active power down : one or more banks active state.
2. Precharge power down : all banks precharge state.
3. The auto refresh is the same as CBR refresh of conventional DRAM.
No precharge commands are required after auto refresh command.
During t
RFC
from auto refresh command, any other command can not be accepted.
4. Before executing auto/self refresh command, all banks must be idle state.
5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh mode, refresh interval and refresh operation are perfomed internally.
After self refresh entry, self refresh mode is kept while CKE is low.
During self refresh mode, all inputs expect CKE will be don't cared, and outputs will be in Hi-Z state.
For the time interval of t
RFC
from self refresh exit command, any other command can not be accepted.
Before/After self refresh mode, burst auto refresh cycle (4096 cycles) is recommended.
10. Clock Suspend Exit & Power Down Exit
CLK
CKE
CMD
RD
1) Clock Suspend (=Active Power Down) Exit
tSS
CLK
CKE
CMD
2) Power Down (=Precharge Power Down)
Note 1
Note 5
Internal
CLK
NOP
tSS
Note 2
Internal
CLK
11. Auto Refresh & Self Refresh
CLK
CMD
1) Auto Refresh & Self Refresh
CKE
PRE
AR
CMD
Note 4
tRP
tRFC
ó
ó
ó
ó
CLK
CMD
2) Self Refresh
CKE
PRE
SR
CMD
Note 4
tRP
tRFC
ó
ó
Note 6
Note 3
ó
ACT
相關(guān)PDF資料
PDF描述
KM416S4031B 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動(dòng)態(tài)RAM（帶SSTL接口）)
KM416S4031C 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動(dòng)態(tài)RAM（帶SSTL接口）)
KM416S8030BN 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
KM416S8030B 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416S4030C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-F10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-F7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-F8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-FH 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
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