- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384547 > IXGH6N170A (IXYS CORP) High Voltage IGBT PDF資料下載
參數(shù)資料
| 型號： | IXGH6N170A |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage IGBT |
| 中文描述： | 6 A, 1700 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 61K |
| 代理商： | IXGH6N170A |
2003 IXYS All rights reserved
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1700
= 6
= 7.0
= 32 ns
V
A
V
IXGH 6N170A
IXGT 6N170A
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD (IXGH)
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL
94
V-0
flammability classification
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98990A(01/03)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
1700
3.0
V
V
5.0
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
10
μ
A
μ
A
Note 1
500
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
T
J
= 25
°
C
T
J
= 125
°
C
5.5
6.5
7.0
V
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
1700
1700
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 33
Clamped inductive load
6
3
A
A
A
14
I
= 12
@ 0.8 V
CES
A
t
SC
T
J
= 125
°
C, V
CE
= 1200 V; V
GE
= 15 V, R
G
= 33
10
μ
s
P
C
T
J
T
JM
T
stg
T
C
= 25
°
C
75
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
M
d
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
300
°
C
TO-247
TO-268
6
4
g
g
TO-268 (IXGT)
G
E
High Voltage
IGBT
C (TAB)
Advance Technical Data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGT6N170A | High Voltage IGBT |
| IXGP12N60U1 | Low VCE(sat) IGBT with Diode Combi Pack |
| IXGR32N60C | Lightspeed Series HiPerFAST IGBT(Lightspeed系列，VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| IXGR39N60B | HiPerFAST IGBT(VCES為600V，VCE(sat)為1.8V的HiPerFAST絕緣柵雙極晶體管) |
| IXKC13N80C | CoolMOS Power MOSFET ISOPLUS220 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH6N170A_09 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage IGBTs |
| IXGH72N60A3 | 功能描述:IGBT 晶體管 72 Amps 600V 1.35 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH72N60B3 | 功能描述:IGBT 晶體管 72 Amps 600V 1.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH72N60C3 | 功能描述:IGBT 晶體管 G-SERIES A3/B3/C3 GENX3 IGBT 600V 72A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH85N30C3 | 功能描述:IGBT 晶體管 85 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。