參數(shù)資料
型號： IXGT6N170A
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： High Voltage IGBT
中文描述： 6 A, 1700 V, N-CHANNEL IGBT, TO-268AA
封裝： PLASTIC, TO-268, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 61K
代理商： IXGT6N170A
2003 IXYS All rights reserved
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1700
= 6
= 7.0
= 32 ns
V
A
V
IXGH 6N170A
IXGT 6N170A
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD (IXGH)
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL
94
V-0
flammability classification
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98990A(01/03)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
1700
3.0
V
V
5.0
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
10
μ
A
μ
A
Note 1
500
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
T
J
= 25
°
C
T
J
= 125
°
C
5.5
6.5
7.0
V
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
1700
1700
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 33
Clamped inductive load
6
3
A
A
A
14
I
= 12
@ 0.8 V
CES
A
t
SC
T
J
= 125
°
C, V
CE
= 1200 V; V
GE
= 15 V, R
G
= 33
10
μ
s
P
C
T
J
T
JM
T
stg
T
C
= 25
°
C
75
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
M
d
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
300
°
C
TO-247
TO-268
6
4
g
g
TO-268 (IXGT)
G
E
High Voltage
IGBT
C (TAB)
Advance Technical Data
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相關代理商/技術參數(shù)
參數(shù)描述
IXGT6N170ATR 制造商:IXYS Integrated Circuits Division 功能描述:
IXGT72N60A3 功能描述:IGBT 模塊 GenX3 600V IGBTs RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
IXGT72N60A3 TRL 制造商:IXYS Integrated Circuits Division 功能描述:
IXGT72N60B3 功能描述:IGBT 模塊 GenX3 B3-Class IGBTs RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
IXGV25N250S 制造商:IXYS Corporation 功能描述:IGBT 2500V 60A 250W PLUS220SMD
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