參數(shù)資料
型號： IXKC13N80C
廠商： IXYS CORP
元件分類： JFETs
英文描述： CoolMOS Power MOSFET ISOPLUS220
中文描述： 13 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS220, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 1145K
代理商： IXKC13N80C
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
800
V
V
GS
Continuous
±
20
V
I
D25
I
D90
T
C
T
C
= 25
°
C; Note 1
= 90
°
C, Note 1
13
A
9
A
I
D(RMS)
Package lead current limit
45
A
E
AS
E
AR
I
D
I
D
V
DS
<
V
,
I
F
≤
17 A,
T
VJ
= 150
°
C
d
S
/dt = 100 A/
μ
s
= 25
°
C
= 4A, T
C
= 25
°
C
= 10A
670
0.5
mJ
mJ
dv/dt
6
V/ns
P
D
T
C
125
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +125
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
V
ISOL
RMS leads-to-tab, 50/60 Hz, t = 1 minute
2500
V~
F
C
Mounting force
11 ... 65 / 2.4 ...11 N/lb
Weight
2
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DS(on)
V
GS
= 10 V, I
D
= I
D90
, Note 3
V
GS
= 10 V, I
D
= I
D90
, Note 3 T
J
= 125
°
C
250
550
290 m
m
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
2
4
V
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
μ
A
125
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
G = Gate,
S = Source
D = Drain,
* Patent pending
V
DSS
I
D25
R
DS(on)
= 800 V
= 13 A
=290 m
98865 (11/01)
ADVANCE TECHNICAL INFORMATION
ISOPLUS 220
TM
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
3
RD
generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
Low thermal resistance due to reduced
chip thickness
Low drain to tab capacitance(<30pF)
Applications
Switched Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC)
Welding
Inductive Heating
Advantages
Easy assembly: no screws or isolation
foils required
Space savings
High power density
G
D
S
Isolated back surface*
CoolMOS Power MOSFET
ISOPLUS220
TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low R
DS(on)
, High Voltage MOSFET
IXKC 13N80C
COOLMOS is a trademark of Infineon
Technology.
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