參數(shù)資料
型號(hào): IRS21853SPBF
廠商: International Rectifier
英文描述: Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
中文描述: 雙通道高側(cè)驅(qū)動(dòng)IC
文件頁數(shù): 4/17頁
文件大?。?/td> 188K
代理商: IRS21853SPBF
IRS21853SPBF
4
Static Electrical Characteristics
(V
CC
-COM)=(V
B1,2
-V
S1,2
)=15 V. T
A
= 25
o
C unless otherwise specified. The V
IN
, V
IN,TH
, and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to respective V
S1,2
and are applicable to the respective output leads
HO1,2.
The VCCUV parameters are referenced to COM. The V
BSUV1,2
parameters are referenced to V
S1,2
.
Symbol
Definition
Min
Typ
Max Units
Test Conditions
V
CCUV+
V
CC
supply undervoltage positive going threshold
8.0
8.9
9.8
V
CCUV-
V
CC
supply undervoltage negative going threshold
7.4
8.2
9.0
V
BSUV+
V
BS1,2
supply undervoltage positive going
threshold
V
BS1,2
supply undervoltage negative going
threshold
High-side floating well offset supply leakage
current
8.0
8.9
9.8
V
BSUV-
7.4
8.2
9.0
V
I
LK1,2
---
---
50
V
B1,2
= V
S1,2
= 600 V
I
QBS
Quiescent V
BS
supply current
---
75
150
I
QCC
V
IH
V
IL
Quiescent V
CC
supply current
---
110
220
μA
HIN1,2 = 0 V or 5 V
Logic “1” input voltage
3.5
---
---
Logic “0” input voltage
---
---
0.6
V
OH
HO1,2 high level output voltage, V
BIAS
-V
O
---
---
1.4
I
o
= 0 A
V
OL
HO1,2 low level output voltage, V
O
---
---
0.0
6
V
I
o
=20 mA
I
IN+
Logic “1” input bias current
---
5
20
V
HIN1,2
=5 V
I
IN-
Logic “0” input bias current
---
---
5
μA
V
HIN1,2
=0 V
I
o+
Output high short circuit pulsed current
HO1,2
Output low short circuit pulsed current
HO1,2
---
2
---
V
O
=0 V,V
IN
=0 V,
PW<=10 μs
V
O
=15 V,V
IN
=5 V,
PW<=10 μs
I
o-
---
2
---
A
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