參數(shù)資料
型號： IRS21853SPBF
廠商： International Rectifier
英文描述： Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
中文描述： 雙通道高側(cè)驅(qū)動IC
文件頁數(shù)： 3/17頁
文件大?。?/td> 188K
代理商： IRS21853SPBF
IRS21853SPBF
3
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM.
Symbol
Definition
V
CC
Low side supply voltage
V
IN
Logic input voltage (HIN1,2)
V
B1,2
High side floating well supply voltage
V
S1,2
High side floating well supply return voltage
V
HO1,2
Floating gate drive output voltage
dV
S
/dt
Allowable V
S1,2
offset supply transient relative to COM
P
D
Package power dissipation @ T
A
≤
+25 oC
R
θ
JA
Thermal resistance, junction to ambient
T
J
Junction temperature
T
S
Storage temperature
T
L
Lead temperature (soldering, 10 seconds)
Note1: All supplies are fully tested at 25 V. An internal 20 V clamp exists for each supply.
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to COM. The offset rating are tested with supplies of (V
CC
-COM)=(V
B1,2
-V
S1,2
)=15 V.
Symbol
Definition
V
CC
Low side supply voltage
V
IN
HIN1, 2 input voltage
V
B1,2
High side floating well supply voltage
V
S1,2
High side floating well supply offset voltage
V
HO1,2
Floating gate drive output voltage
T
A
Ambient temperature
Note 2:
V
S1,2
and V
B1,2
voltages will be tolerant to short negative transient spikes. These will be defined and specified in
the future.
Note 3:
Logic operation for V
S
of –5 V to 600 V. Logic state held for V
S
of –5 V to –V
BS1,2
. (Please refer to Design Tip
DT97-3 for more details).
Min
-0.3
Max
Units
20 (Note1)
V
CC
+0.3
620 (Note1)
V
Bn
+0.3
V
Bn
+0.3
50
1.25
100
COM-0.3
-0.3
V
B1,2
-20
V
S1,2
-0.3
-
-
-
V
V/ns
W
oC/W
-55
150
-
300
oC
Min
10
COM
V
S1,2
+10
Note 2
V
S1,2
-40
Max
20
VCC
V
S1,2
+20
600
V
B1,2
125
Units
V
oC
相關PDF資料
PDF描述
IRS21952SPBF HIGH SIDE & DUAL LOW SIDE DRIVER IC
IRS21952STRPBF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS21953SPBF HIGH SIDE & DUAL LOW SIDE DRIVER IC
IRS2308 HALF-BRIDGE DRIVER
IRS2308PbF HALF-BRIDGE DRIVER
相關代理商/技術參數(shù)
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IRS21858STRPBF 功能描述:功率驅(qū)動器IC Hi&Lw Sd Dual Drvr IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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