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參數(shù)資料
| 型號(hào)： | IRGP50B60PDPBF |
| 廠商： | International Rectifier |
| 英文描述： | WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | WARP2系列IGBT與超快軟恢復(fù)二極管 |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大小： | 396K |
| 代理商： | IRGP50B60PDPBF |
IRGP50B60PDPbF
www.irf.com
7
Fig. 24.
Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 23.
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 25
- Forward SOA, T
C
= 25°C; T
J
≤
150°C
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τ
i (sec)
0.0789 0.000277
0.2614 0.040918
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci= i
/
Ri
Ci=
i
/
Ri
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
0.20
0.10
0.05
D = 0.50
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τ
i (sec)
0.0733 0.000420
0.1301 0.002274
0.1358 0.023026
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci= i
/
Ri
Ci=
i
/
Ri
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID
OPERATION IN THIS AREA
LIMITED BY VCE(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100μsec
1msec
10msec
100msec
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