參數(shù)資料
型號(hào)： IRG4PSH71UDPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 250K
代理商： IRG4PSH71UDPBF
IRG4PSH71UDPbF
2
www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units Conditions
1200
—
—
V
19
—
—
V
—
0.78
—
V/°C V
GE
= 0V, I
C
= 1mA
—
2.52
2.70
V
—
3.17
—
—
2.68
—
3.0
—
6.0
—
-9.2
—
mV/°CV
CE
= V
GE
, I
C
= 1.0mA
48
72
—
S
—
—
500
μA
—
—
2.0
—
—
5000
—
2.92
3.9
V
—
2.88
3.7
—
—
±100
nA
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
I
C
= 70A
I
C
= 140A
I
C
= 70A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
GE
= 15V
See Fig.2, 5
V
CE(on)
Collector-to-Emitter Saturation Voltage
V
GE(th)
V
GE(th)
/
T
J
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
V
CE
= 100V, I
C
= 70A
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 10V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
F
= 70A See Fig.13
I
F
= 70A, T
J
= 150°C
V
GE
= ±20V
V
FM
Diode Forward Voltage Drop
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
TS
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Min. Typ. Max. Units
—
380
—
61
—
130
—
46
—
77
—
250
—
220
—
8.8
—
9.4
—
18.2
—
43
—
78
—
330
—
480
—
26
—
13
—
6640
—
420
—
60
—
110
—
180
—
6.0
—
8.9
—
350
—
870
—
150
—
130
Conditions
I
C
= 70A
V
CC
= 400V See Fig.8
V
GE
= 15V
I
C
= 70A, V
CC
= 960V
ns
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 9, 10, 11, 14
570
24
200
—
—
350
330
—
—
19.7
—
—
—
—
—
—
—
—
—
170
270
9.0
13
530
1300
230
200
nC
mJ
T
J
= 150°C, See Fig. 9, 10, 11, 14
ns
I
C
= 70A, V
CC
= 960V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
mJ
nH
Measured 5mm from package
V
GE
= 0V
pF
V
CC
= 30V, See Fig.7
f = 1.0MHz
ns
T
J
=25°C See Fig
T
J
=125°C 14
T
J
=25°C See Fig
I
F
= 70A
I
rr
Diode Peak Reverse Recovery Current
A
T
J
=125°C 15
T
J
=25°C See Fig
V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
nC
T
J
=125°C 16
A/μs
T
J
=25°C See Fig
T
J
=125°C 17
di/dt = 200A/μs
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
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