參數(shù)資料
型號(hào)： IRGB4065PBF
廠商： International Rectifier
英文描述： PDP TRENCH IGBT
中文描述： 等離子溝道IGBT
文件頁數(shù)： 1/9頁
文件大?。?/td> 795K
代理商： IRGB4065PBF
www.irf.com
1
09/05/06
IRGB4065PbF
IRGS4065PbF
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low V
CE(on)
and Energy per Pulse (E
PULSETM
)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
V
CE
min
V
CE(ON)
typ. @ I
C
= 70A
I
RP
max @ T
C
= 25°C
T
J
max
300
1.75
205
150
V
V
A
°C
Key Parameters
E
C
G
n-channel
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Units
V
A
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
W
W/°C
°C
T
J
T
STG
N
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.70
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D
2
Pak
°C/W
Max.
±30
40
205
178
71
1.4
70
300
-40 to + 150
10lb in (1.1N m)
D
2
Pak
IRGS4065DPbF
E
C
G
C
TO-220
IRGB4065DPbF
C
E
C
G
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGB4086PBF 功能描述:IGBT 晶體管 300V Plasma Display Panel IGBT Swtch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGB420 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)
IRGB420U 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)
IRGB420UD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V,Ic=7.5A)
IRGB430 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)
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