參數(shù)資料
型號(hào)： IRGB4065PBF
廠商： International Rectifier
英文描述： PDP TRENCH IGBT
中文描述： 等離子溝道IGBT
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 795K
代理商： IRGB4065PBF
2
www.irf.com
Half sine wave with duty cycle = 0.25, ton=1μsec.
R
θ
is measured at
Pulse width
≤
400μs; duty cycle
≤
2%.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
CES
Collector-to-Emitter Breakdown Voltage
Β
V
CES
/
T
J
Breakdown Voltage Temp. Coefficient
Min.
300
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
–––
—
—
—
—
—
—
—
—
100
Typ.
–––
0.23
1.20
1.35
1.75
2.35
2.00
–––
-11
2.0
50
–––
–––
26
62
20
30
26
170
160
30
28
250
310
–––
Max. Units
–––
–––
1.40
–––
2.10
–––
–––
5.0
–––
25
–––
100
-100
–––
–––
–––
—
—
—
—
—
—
—
—
–––
V
V/°C
V
V
GE(th)
V
GE(th)
/
T
J
I
CES
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
V
mV/°C
μA
I
GES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
nA
g
fe
Q
g
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
st
S
nC
I
C
= 25A, V
CC
= 180V
ns
R
G
= 10
, L=200μH, L
S
= 150nH
T
J
= 25°C
I
C
= 25A, V
CC
= 180V
ns
R
G
= 10
, L=200μH, L
S
= 150nH
T
J
= 150°C
ns
E
PULSE
Energy per Pulse
μJ
C
iss
C
oss
C
rss
L
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
–––
–––
–––
–––
2200
110
55
5.0
–––
–––
–––
–––
pF
Between lead,
6mm (0.25in.)
from package
and center of die contact
nH
L
E
Internal Emitter Inductance
–––
13
–––
V
CE
= 30V
= 1.0MHz, See Fig.13
See Fig. 14
V
GE
= 0V
L = 220nH, C= 0.40μF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1
,
T
J
= 25°C
L = 220nH, C= 0.40μF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1
,
T
J
= 100°C
Conditions
V
GE
= 0V, I
CE
= 1.0 mA
Reference to 25°C, I
CE
= 1.0 mA
V
GE
= 15V, I
CE
= 25A
V
GE
= 15V, I
CE
= 40A
V
GE
= 15V, I
CE
= 120A
V
GE
= 15V, I
CE
= 70A, T
J
= 150°C
V
CE
= V
GE
, I
CE
= 500μA
V
GE
= 15V, I
CE
= 70A
V
GE
= 30V
V
GE
= -30V
V
CE
= 25V, I
CE
= 25A
V
CE
= 200V, I
C
= 25A, V
GE
= 15V
–––
975
–––
V
CC
= 240V, V
GE
= 15V, R
G
= 5.1
Static Collector-to-Emitter Voltage
V
CE(on)
–––
875
–––
V
CE
= 300V, V
GE
= 0V
V
CE
= 300V, V
GE
= 0V, T
J
= 150°C
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