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參數(shù)資料
| 型號： | IRGBC20M-S |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（短路額定超快速絕緣柵型雙極型晶體管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 105K |
| 代理商： | IRGBC20M-S |
C-335
IRGBC20M-S
Short Circuit Rated
Fast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
Short circuit rated - 10μs @ 125°C, V
GE
= 15V
Switching-loss rating includes all "tail" losses
Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
V
CES
= 600V
V
CE(sat)
≤
2.3V
@V
GE
= 15V, I
C
= 8.0A
E
C
G
n-channel
PD - 9.1131A
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
Parameter
Junction-to-Case
Junction-to-Ambient, (PCB mount)**
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
Typ.
—
—
—
2 (0.07)
Max.
2.1
40
80
—
Units
R
θ
JC
R
θ
JA
R
θ
JA
Wt
**
When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
°C/W
g (oz)
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
13
8.0
26
26
10
±20
5.0
60
24
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Thermal Resistance
SMD-220
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Revision 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGBC20M | Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管) |
| IRGBC30K | Aluminum Polymer SMT Capacitor; Capacitance: 100uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel |
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| IRGBC30M | Aluminum Polymer SMT Capacitor; Capacitance: 220uF; Voltage: 4V; Case Size: 8x7 mm; Packaging: Tape & Reel |
| IRGBC30S | Aluminum Polymer SMT Capacitor; Capacitance: 680uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGBC20S | 制造商:Conitec Datasystems 功能描述:Adapter 24 pin DIL => 28 pin PLCC |
| IRGBC20SD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=10A) |
| IRGBC20U | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGBC20UD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.5A) |
| IRGBC26 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 19A I(C) | TO-220AB |
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