參數(shù)資料
型號： IRGBC20M-S
廠商： International Rectifier
英文描述： Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
中文描述： 絕緣門雙極晶體管（IGBTs）（短路額定超快速絕緣柵型雙極型晶體管）
文件頁數(shù)： 2/6頁
文件大?。?/td> 105K
代理商： IRGBC20M-S
C-336
IRGBC20M-S
Notes:
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 50
, ( See fig. 13a )
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ. Max.
7.9
3.6
6.0
29
22
270
280
0.14
0.86
1.0
—
Units
Conditions
16
5.2
9.0
—
—
400
510
—
—
2.0
—
I
C
= 8.0A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 8.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
nC
See Fig. 8
ns
mJ
See Fig. 9, 10, 11, 14
μs
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 50
, V
CPK
< 500V
T
J
= 150°C,
I
C
= 8.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
See Fig. 10, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
27
21
370
420
1.4
7.5
365
47
4.8
—
—
—
—
—
—
—
—
—
ns
mJ
nH
pF
See Fig. 7
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min.
600
20
—
—
—
—
3.0
—
2.7
—
—
—
Typ. Max.
—
—
0.42
2.0
2.7
2.5
—
-11
3.8
—
—
—
Units
V
V
V/°C
Conditions
—
—
—
2.3
—
—
5.5
—
—
250
1000
±100
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 8.0A
I
C
= 13A
I
C
= 8.0A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 8.0A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
GE
= ±20V
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
mV/°C
S
μA
I
GES
Gate-to-Emitter Leakage Current
nA
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
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