參數(shù)資料
型號: IRGBC20M-S
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
文件頁數(shù): 5/6頁
文件大小: 105K
代理商: IRGBC20M-S
C-339
IRGBC20M-S
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
0.880
0.884
0.888
0.892
0.896
0.900
10
20
R , Gate Resistance ( )
30
40
50
60
T
W
V = 480V
V = 15V
T = 25°C
I = 8.0A
0.1
1
10
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
T
R = 50
V = 15V
V = 480V
I = 16A
I = 8.0A
I = 4.0A
A
0
200
400
600
1
10
100
V , Collector-to-Emitter Voltage (V)
C
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
4
8
12
16
20
G
V
Q , Total Gate Charge (nC)
V = 400V
I = 8.0A
C
A
相關PDF資料
PDF描述
IRGBC20M Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
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