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參數(shù)資料
| 型號： | IRG4BC20MD-S |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 18 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 345K |
| 代理商： | IRG4BC20MD-S |
IRG4BC20MD-SPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 ----
----
V
VGE = 0V, IC = 250A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---- 0.67 ----
V/°C
VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1.85 2.1
IC = 11A
VGE = 15V
---- 2.46 ----
V
IC = 18A
See Fig. 2, 5
---- 2.07 ----
IC = 11A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
4.0
----
6.5
VCE = VGE, IC = 250A
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ----
-11
---- mV/°C VCE = VGE, IC = 250A
gfe
Forward Transconductance
3.0
3.6
----
S
VCE = 100V, IC = 11A
ICES
Zero Gate Voltage Collector Current
----
250
A
VGE = 0V, VCE = 600V
----
---- 2500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
----
1.4
1.7
V
IC = 8.0A
See Fig. 13
----
1.3
1.6
IC = 8.0A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
----
---- ±100
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
----
39
59
IC = 11A
Qge
Gate - Emitter Charge (turn-on)
----
5.3
8.0
nC
VCC = 400V
See Fig. 8
Qgc
Gate - Collector Charge (turn-on)
----
20
30
VGE = 15V
td(on)
Turn-On Delay Time
----
21
----
TJ = 25°C
tr
Rise Time
----
37
----
ns
IC = 11A, VCC = 480V
td(off)
Turn-Off Delay Time
----
463
690
VGE = 15V, RG = 50
tf
Fall Time
----
340
510
Energy losses include "tail" and
Eon
Turn-On Switching Loss
---- 0.41 ----
diode reverse recovery.
Eoff
Turn-Off Switching Loss
---- 2.03 ----
mJ
See Fig. 9, 10, 11, 18
Ets
Total Switching Loss
---- 2.44 3.7
td(on)
Turn-On Delay Time
----
19
----
TJ = 150°C,
See Fig. 9, 10, 11, 18
tr
Rise Time
----
41
----
ns
IC = 6.5A, VCC = 480V
td(off)
Turn-Off Delay Time
----
590
----
VGE = 15V, RG = 50
tf
Fall Time
----
600
----
Energy losses include "tail" and
Ets
Total Switching Loss
---- 3.49 ----
mJ
diode reverse recovery.
LE
Internal Emitter Inductance
----
7.5
----
nH
Measured 5mm from package
Cies
Input Capacitance
----
460
----
VGE = 0V
Coes
Output Capacitance
----
54
----
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
----
14
----
= 1.0MHz
trr
Diode Reverse Recovery Time
----
37
55
ns
TJ = 25°C See Fig.
----
55
90
TJ = 125°C
14
IF = 8.0A
Irr
Diode Peak Reverse Recovery Current ----
3.5
5.0
A
TJ = 25°C See Fig.
----
4.5
8.0
TJ = 125°C
15
VR = 200V
Qrr
Diode Reverse Recovery Charge
----
65
138
nC
TJ = 25°C
See Fig.
----
124
360
TJ = 125°C
16
di/dt 200A/s
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
----
240
----
A/s TJ = 25°C
See Fig.
During tb
----
210
----
TJ = 125°C
17
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
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