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參數(shù)資料
| 型號： | IRG4BC20MD-S |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 18 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 345K |
| 代理商： | IRG4BC20MD-S |
IRG4BC20MD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 11A
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case - IGBT
------
2.1
RθJC
Junction-to-Case - Diode
------
2.5
°C/W
RθCS
Case-to-Sink, flat, greased surface
------
0.50
------
RθJA
Junction-to-Ambient, typical socket mount
-----
80
Wt
Weight
------
2 (0.07)
------
g (oz)
Thermal Resistance
01/19/10
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
18
IC @ TC = 100°C
Continuous Collector Current
11
ICM
Pulsed Collector Current
36
A
ILM
Clamped Inductive Load Current
36
IF @ TC = 100°C
Diode Continuous Forward Current
7.0
tsc
Short Circuit Withstand Time
10
s
IFM
Diode Maximum Forward Current
36
A
VGE
Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
60
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbfin (1.1 Nm)
Rugged: 10sec short circuit capable at VGS=15V
Low VCE(on) for 4 to 10kHz applications
IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
Industry standard D2Pak package
Lead-Free
Benefits
Offers highest efficiency and short circuit
capability for intermediate applications
Provides best efficiency for the mid range frequency
(4 to 10kHz)
Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
For Low EMI designs- requires little or no snubbing
Single Package switch for bridge circuit applications
Compatible with high voltage Gate Driver IC's
Allows simpler gate drive
W
www.irf.com
1
Short Circuit Rated
Fast IGBT
D2Pak
PD -95564A
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BC20MDS_07 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4BC20MD-SPBF | 功能描述:IGBT 晶體管 600V Fast 1-8kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC20MD-STRL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB |
| IRG4BC20MD-STRR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB |
| IRG4BC20S | 功能描述:IGBT STD 600V 19A TO-220AB RoHS:否 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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