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參數(shù)資料
| 型號： | IRHF597130 |
| 元件分類： | JFETs |
| 英文描述： | 6.7 A, 100 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | TO-39, HERMETIC SEALED PACKAGE-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 203K |
| 代理商： | IRHF597130 |
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -12V, TC=25°C
Continuous Drain Current
-6.7
ID @ VGS = -12V, TC=100°C Continuous Drain Current
-4.3
IDM
Pulsed Drain Current
-26.8
PD @ TC = 25°C
Max. Power Dissipation
25
W
Linear Derating Factor
0.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
240
mJ
IAR
Avalanche Current
-6.7
A
EAR
Repetitive Avalanche Energy
2.5
mJ
dv/dt
Peak Diode Recovery dv/dt
-17
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in./1.6 mm from case for 10s)
Weight
0.98 (Typical )
g
Pre-Irradiation
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
oC
A
RADIATION HARDENED
IRHF597130
POWER MOSFET
THRU-HOLE (TO-39)
09/26/05
www.irf.com
1
100V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHF597130
100K Rads (Si)
0.24
-6.7A
IRHF593130
300K Rads (Si)
0.24
-6.7A
For footnotes refer to the last page
5
5
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
PD-96963
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