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3
Pre-Irradiation
IRHF597130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100KRads(Si)1
300KRads(Si)2 Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
-100
—
-100
—
V
VGS = 0V, ID = -1.0mA
VGS(th)
Gate Threshold Voltage
-2.0
-4.0
-2.0
-4.0
VGS = VDS, ID = -1.0mA
IGSS
Gate-to-Source Leakage Forward
—
-100
—
-100
nA
VGS =-20V
IGSS
Gate-to-Source Leakage Reverse
—
100
—
100
VGS = 20 V
IDSS
Zero Gate Voltage Drain Current
—
-10
—
-10
A
VDS = -80V, VGS =0V
RDS(on)
Static Drain-to-Source
—
0.205
—
0.205
VGS = -12V, ID = -4.3A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source
—
0.24
—
0.24
VGS = -12V, ID = -4.3A
On-State Resistance(TO-39)
VSD
Diode Forward Voltage
—
-5.0
—
-5.0
V
VGS = 0V, IS = -6.7A
1. Part number IRHF597130
2. Part number IRHF593130
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
V
DS (V)
(MeV/(mg/cm2))
(MeV)
(m)
@V
GS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V
Br
37.9
252.6
33.1
-100
I
59.7
314
30.5
-100
-75
Au
82.3
350
28.4
-100
-30
—
-100
-25
—
@V
GS=20V
-120
-100
-80
-60
-40
-20
0
5
10
15
20
25
VGS
VD
S
Br
I
Au