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參數(shù)資料
| 型號： | IRHF597130 |
| 元件分類： | JFETs |
| 英文描述： | 6.7 A, 100 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | TO-39, HERMETIC SEALED PACKAGE-3 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 203K |
| 代理商： | IRHF597130 |
IRHF597130
Pre-Irradiation
8
www.irf.com
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L =10.6mH
Peak IL = -6.7A, VGS = -12V
ISD ≤ -6.7A, di/dt ≤ -530A/s,
VDD ≤ -100V, TJ ≤ 150°C
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/05
Case Outline and Dimensions — TO-205AF(Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
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