參數(shù)資料
型號: IRHF597130
元件分類: JFETs
英文描述: 6.7 A, 100 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
封裝: TO-39, HERMETIC SEALED PACKAGE-3
文件頁數(shù): 5/8頁
文件大?。?/td> 203K
代理商: IRHF597130
www.irf.com
5
Pre-Irradiation
IRHF597130
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
012
34
567
-VSD , Source-to-Drain Voltage (V)
0.1
1
10
100
-I
S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
VGS = 0V
TJ = 150°C
TJ = 25°C
1
10
100
-VDS, Drain-to-Source Voltage (V)
0
400
800
1200
1600
2000
C
,C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V,
f = 1 MHz
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
0
4
8
12
16
20
-V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= -80V
VDS= -50V
VDS= -20V
ID = -6.7A
FOR TEST CIRCUIT
SEE FIGURE 13
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
-I
D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1
00s
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