參數(shù)資料
型號: IRF7313QPBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 1/7頁
文件大?。?/td> 248K
代理商: IRF7313QPBF
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SO-8
Advanced Process Technology
Ultra Low On-Resistance
Dual N- Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
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Specifically designed for Automotive applications, these
HEXFET
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
in Tape & Reel.
1
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IRF7313TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R
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IRF7313TRPBF-CUT TAPE 制造商:IR 功能描述:Dual N-Channel 30 V 2 W 22 nC Hexfet Power Mosfet Surface Mount - SOIC-8