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參數(shù)資料
| 型號： | IRF7342QPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 193K |
| 代理商： | IRF7342QPBF |
HEXFET
Power MOSFET
Description
V
DSS
= -55V
R
DS(on)
= 0.105
IRF7342QPbF
www.irf.com
1
Parameter
Max.
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
Units
V
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10μs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
W/°C
V
V
V
GS
V
GSM
E
AS
dv/dt
T
J,
T
STG
V/ns
°C
-55 to + 150
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
Absolute Maximum Ratings
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
SO-8
O
Advanced Process Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
O
O
O
O
O
O
O
Specifically designed for Automotive applications, these
HEXFET
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
in Tape & Reel.
PD - 96109
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7342QPBF_10 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET? Power MOSFET |
| IRF7342QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7342TR | 制造商:International Rectifier 功能描述:MOSFET, DUAL P-CHANNEL, -55V, 3.4A, SO-8 |
| IRF7342TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 3.4A 8SOIC - Tape and Reel |
| IRF7342TRPBF | 功能描述:MOSFET MOSFT DUAL PCh -55V 3.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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