參數(shù)資料
型號： IRF7342QPBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/7頁
文件大小： 193K
代理商： IRF7342QPBF
IRF7342QPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
-55
–––
––– -0.054 –––
––– 0.095 0.105
––– 0.150 0.170
-1.0
–––
3.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
–––
3.0
–––
8.4
–––
14
–––
10
–––
43
–––
22
–––
690
–––
210
–––
86
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -3.4A
V
GS
= -4.5V, I
D
= -2.7A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -3.1A
V
DS
= -55V, V
GS
= 0V
V
DS
= -55V, V
GS
= 0V, T
J
= 55°C
V
GS
= -20V
V
GS
= 20V
I
D
= -3.1A
V
DS
= -44V
V
GS
= -10V, See Fig. 10
V
DD
= -28V
I
D
= -1.0A
R
G
= 6.0
R
D
= 16
,
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 9
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
-2.0
-25
-100
100
38
4.5
13
22
15
64
32
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.0A
di/dt = -100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
54
85
-1.2
80
130
V
ns
nC
Source-Drain Ratings and Characteristics
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
-3.4A, di/dt
≤
-150A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25°C, L = 20mH
R
G
= 25
, I
AS
= -3.4A. (See Figure 8)
When mounted on 1 inch square copper board, t<10 sec
相關PDF資料
PDF描述
IRF7343IPBF HEXFET Power MOSFET
IRF7353D1PBF FETKY⑩ MOSFET / Schottky Diode
IRF7379IPBF HEXFET㈢ Power MOSFET
IRF7379PBF HEXFET㈢ Power MOSFET
IRF7379QPBF HEXFET㈢ Power MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IRF7342QPBF_10 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET? Power MOSFET
IRF7342QTRPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7342TR 制造商:International Rectifier 功能描述:MOSFET, DUAL P-CHANNEL, -55V, 3.4A, SO-8
IRF7342TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 3.4A 8SOIC - Tape and Reel
IRF7342TRPBF 功能描述:MOSFET MOSFT DUAL PCh -55V 3.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*