參數(shù)資料
型號(hào): IRF6646
廠商: International Rectifier
英文描述: DirectFET Power MOSFET
中文描述: DirectFET功率MOSFET
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 245K
代理商: IRF6646
IRF6646
www.irf.com
5
Fig 13.
Typical Threshold Voltage vs.
Junction Temperature
Fig 12.
Maximum Drain Current vs. Ambient Temperature
Fig 10.
Typical Source-Drain Diode Forward Voltage
Fig11.
Maximum Safe Operating Area
Fig 14.
Maximum Avalanche Energy vs. Drain Current
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID
OPERATION IN THIS AREA
LIMITED BY RDS(on)
TA = 25°C
TJ = 150°C
Single Pulse
100μsec
1msec
10msec
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
900
1000
EA
ID
TOP
3.3A
4.0A
BOTTOM 7.2A
25
50
75
100
125
150
TA , Ambient Temperature (°C)
0
2
4
6
8
10
12
14
ID
-75
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( °C )
2.0
3.0
4.0
5.0
6.0
TG
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
0
1
10
100
1000
IS
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
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