參數(shù)資料
型號： IRF6646
廠商： International Rectifier
英文描述： DirectFET Power MOSFET
中文描述： DirectFET功率MOSFET
文件頁數(shù)： 2/9頁
文件大?。?/td> 245K
代理商： IRF6646
IRF6646
2
www.irf.com
Notes:
c
Pulse width
≤
400μs; duty cycle
≤
2%.
d
Repetitive rating; pulse width limited by max. junction temperature.
e
Thermally limited and used R
θ
ja
to calculate.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
80
–––
–––
2.8
–––
–––
–––
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.10
7.6
–––
-11
–––
–––
–––
–––
–––
36
7.6
2.0
12
14
14
18
1.0
17
20
31
12
2060
480
120
2180
310
Max. Units
–––
–––
9.5
4.8
–––
20
250
100
-100
–––
50
–––
–––
BV
DSS
Β
V
DSS
/
T
J
R
DS(on)
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
V/°C
m
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Diode Characteristics
nC
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 17
nC
ns
pF
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
Typ.
–––
Max. Units
2.5
e
I
S
A
I
SM
–––
–––
96
V
SD
t
rr
Q
rr
–––
–––
–––
–––
36
48
1.3
54
72
V
ns
nC
I
D
= 7.2A
V
DS
= 64V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 7.2A
V
GS
= 10V
V
DS
= 40V
T
J
= 25°C, I
F
= 7.2A, V
DD
= 40V
di/dt = 100A/μs
c
T
J
= 25°C, I
S
= 7.2A, V
GS
= 0V
c
showing the
integral reverse
p-n junction diode.
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 80V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
c
V
DS
= 16V, V
GS
= 0V
V
DD
= 40V, V
GS
= 10V
c
I
D
= 7.2A
R
G
=6.2
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
MOSFET symbol
Conditions
V
GS
= 0V, V
DS
= 64V, f=1.0MHz
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