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參數(shù)資料
| 型號： | IRF6641TRPBF |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET TM Power MOSFET |
| 中文描述： | 商標(biāo)的DirectFET功率MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 260K |
| 代理商： | IRF6641TRPBF |
2
www.irf.com
S
D
G
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
Electrical Characteristic @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
V
GS(th)
/
T
J
Gate Threshold Voltage Coefficient
I
DSS
Drain-to-Source Leakage Current
Min.
200
–––
–––
3.0
–––
–––
–––
–––
–––
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.23
51
4.0
-11
–––
–––
–––
–––
–––
34
8.7
1.9
9.5
14
11
12
1.0
16
11
31
6.5
2290
240
46
1780
100
Max.
–––
–––
59.9
4.9
–––
20
250
100
-100
–––
48
–––
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
m
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Diode Characteristics
nC
See Fig. 15
nC
ns
pF
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
Typ.
–––
Max.
26
Units
I
S
A
I
SM
–––
–––
37
V
SD
t
rr
Q
rr
–––
–––
–––
–––
85
320
1.3
130
480
V
ns
nC
I
D
= 5.5A
V
DS
= 160V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 5.5A
V
GS
= 10V
V
DS
= 100V
T
J
= 25°C, I
F
= 5.5A, V
DD
= 100V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 5.5A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 200V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.5A
V
DS
= 16V, V
GS
= 0V
V
DD
= 100V, V
GS
= 10V
I
D
= 5.5A
R
G
= 6.2
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
MOSFET symbol
Conditions
V
GS
= 0V, V
DS
= 160V, f=1.0MHz
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| IRF6641TRPBF_07 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET TM Power MOSFET |
| IRF6643TR1PBF | 功能描述:MOSFET MOSFT 150V 35A 35mOhm 39nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6643TRPBF | 功能描述:MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6644 | 功能描述:MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6644PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
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