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參數(shù)資料
| 型號： | IRF1704 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 40V的，的Rds（on）\u003d 0.004ohm，身份證\u003d 170A章） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IRF1704 |
IRF1704
8
www.irf.com
LEAD ASSIG NM ENTS
1 - GATE
2 - DRAIN
3 - SOU RC E
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
N OTES:
1 D IMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 C ONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLU DE BURRS.
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMBLY
LOT CODE 9B1M
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
9246
IRF1010
9B 1M
A
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101]market.
Qualification Standards can be found on IR
’
s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
02/02
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| IRF2204LPBF | HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mヘ , ID = 170A ) |
| IRF2204SPBF | HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mヘ , ID = 170A ) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF1730G | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=3.7A) |
| IRF1902 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=20V) |
| IRF1902GPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1902GTRPBF | 功能描述:MOSFET MOSFT 20V 4.2A 85mOhm 5nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1902PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 85mOhms 5nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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