參數(shù)資料
型號(hào)： IRF1704
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 40V的，的Rds（on）\u003d 0.004ohm，身份證\u003d 170A章）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 102K
代理商： IRF1704
IRF1704
2
www.irf.com
Parameter
Min. Typ. Max. Units
40
–––
–––
0.036
–––
–––
–––
0.004
2.0
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
–––
42
–––
39
–––
16
–––
120
–––
73
–––
37
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 100A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 100A
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 175
°
C
V
GS
= 20V
V
GS
= -20V
I
D
= 100A
V
DS
= 32V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 20V
I
D
= 100A
R
G
= 2.5
V
GS
= 10V,See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 32V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/
°
C
V
S
4.0
–––
20
250
200
-200
260
63
59
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
6950
–––
1660
–––
200
6250
–––
1470
–––
2320
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
J
= 25
°
C, L = 0.13mH, V
GS
= 10V
R
G
= 25
, I
AS
= 100A. (See Figure 12)
I
SD
≤
100A, di/dt
≤
150A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
200
°
C
Pulse width
≤
400μs; duty cycle
≤
2%.
Notes:
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 100A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 100A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
73
200
1.3
110
300
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
170
680
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
At the point of termination of the leads at the PCB, the temp.
should be limited to 175
°
C. The device case temperature is
allowed to be higher
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