參數(shù)資料
型號: IPB080N06NG
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢ Power-Transistor
中文描述: 的OptiMOS㈢功率晶體管
文件頁數(shù): 2/10頁
文件大?。?/td> 446K
代理商: IPB080N06NG
IPB080N06N G IPP080N06N G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
0.7
K/W
SMD version, device on PCB
R
thJA
minimal footprint
-
-
62
6 cm
2
cooling area
3)
-
-
40
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
60
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=150 μA
2.1
3.0
4
Zero gate voltage drain current
I
DSS
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
-
0.01
1
μA
V
DS
=60 V,
V
GS
=0 V,
T
j
=125 °C
-
1
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=60 V
-
1
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=80 A,
-
6.5
8
m
V
GS
=10 V,
I
D
=80 A,
SMD version
-
6.2
7.7
Gate resistance
R
G
-
1.5
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=80 A
47
94
-
S
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for
drain connection. PCB is vertical in still air.
Values
Rev. 1.01
page 2
2006-05-02
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