參數(shù)資料
型號(hào): IDT7034L20PF8
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 4K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
封裝: 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
文件頁(yè)數(shù): 3/19頁(yè)
文件大?。?/td> 167K
代理商: IDT7034L20PF8
6.42
IDT7034S/L
High-Speed 4K x 18 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
11
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Read With
BUSY (M/S = VIH)" or "Timing Waveform of Write With
Port-To-Port Delay (M/
S = VIH)".
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of 0ns, tWDD – tWP (actual) or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited on Port "B" during contention with Port "A".
5. To ensure that a write cycle is completed on Port "B" after contention with Port "A".
6. 'X' in part numbers indicates power rating (S or L).
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(6)
Symbol
Parameter
7034X15
Com'l Only
7034X20
Com'l & Ind
Unit
Min.
Max.
Min.
Max.
BUSY TIMING (M/S=VIH)
tBAA
BUSY Access Time from Address Match
____
15
____
20
ns
tBDA
BUSY Disable Time from Address Not Matched
____
15
____
20
ns
tBAC
BUSY Access Time from Chip Enable Low
____
15
____
20
ns
tBDC
BUSY Access Time from Chip Enable High
____
15
____
17
ns
tAPS
Arbitration Priority Set-up Time(2)
5
____
5
____
ns
tBDD
BUSY Disable to Valid Data(3)
____
18
____
30
ns
tWH
Write Hold After
BUSY(5)
12
____
15
____
ns
BUSY TIMING (M/S=VIL)
tWB
BUSY Input to Write(4)
0
____
0
____
ns
tWH
Write Hold After
BUSY(5)
12
____
15
____
ns
PORT-TO-PORT DELAY TIMING
tWDD
Write Pulse to Data Delay(1)
____
30
____
45
ns
tDDD
Write Data Valid to Read Data Delay(1)
____
25
____
30
ns
4089 tbl 14
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