參數(shù)資料
型號： IDT71256L35PI
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 32K X 8 STANDARD SRAM, 35 ns, PDIP28
封裝： 0.600 INCH, PLASTIC, DIP-28
文件頁數(shù)： 1/10頁
文件大?。?/td> 108K
代理商： IDT71256L35PI
AUGUST 2000
DSC-2946/8
1
2000 Integrated Device Technology, Inc.
NO
T RECOMMENDED
FOR
NEW
DESIGNS
Features
x
High-speed address/chip select time
– Military: 25/35/45/55/70/85/100ns (max.)
– Industrial: 25/35ns (max.)
– Commercial: 20/25/35ns (max.) low power only
x
Low-power operation
x
Battery Backup operation – 2V data retention
x
Produced with advanced high-performance CMOS
technology
x
Input and output directly TTL-compatible
x
Available in standard 28-pin (300 or 600 mil) ceramic DIP,
28-pin (600 mil) plastic DIP, 28-pin (300 mil) SOJ and
32-pin LCC
x
Military product compliant to MIL-STD-883, Class B
Functional Block Diagram
Description
The IDT 71256 is a 262,144-bit high-speed static RAM organized as
32K x 8. It is fabricated using IDT's high-performance, high-reliability
CMOS technology.
Address access times as fast as 20ns are available with power
consumptionofonly350mW(typ.).Thecircuitalsooffersareducedpower
standbymode.When
CSgoesHIGH,thecircuitwillautomaticallygotoand
remain in, a low-power standby mode as long as
CS remains HIGH. In
the full standby mode, the low-power device consumes less than 15
W,
typically. This capability provides significant system level power and
cooling savings. The low-power (L) version also offers a battery backup
data retention capability where the circuit typically consumes only 5
W
when operating off a 2V battery.
The IDT71256 is packaged in a 28-pin (300 or 600 mil) ceramic DIP,
a 28-pin 300 mil SOJ, a 28-pin (600 mil) plastic DIP, and a 32-pin LCC
providing high board level packing densities.
The IDT71256 military RAM is manufactured in compliance with the
latestrevisionofMIL-STD-883,ClassB,makingitideallysuitedtomilitary
temperatureapplicationsdemandingthehighestlevelofperformanceand
reliability.
CMOS Static RAM
256K (32K x 8-Bit)
IDT71256S
IDT71256L
A0
ADDRESS
DECODER
262,144 BIT
MEMORY ARRAY
I/O CONTROL
2946 drw 01
INPUT
DATA
CIRCUIT
WE
CS
VCC
GND
A14
I/O0
I/O7
CONTROL
CIRCUIT
OE
,
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT71256L35TDB 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 35NS 28CDIP
IDT71256L35Y 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
IDT71256L35Y/2996 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
IDT71256L35Y8 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
IDT71256L35YG 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
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