參數(shù)資料
型號: IDT7034L20PF8
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 4K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
封裝: 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
文件頁數(shù): 19/19頁
文件大小: 167K
代理商: IDT7034L20PF8
6.42
IDT7034S/L
High-Speed 4K x 18 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
9
Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8)
Timing Waveform of Write Cycle No. 2, CE, UB, LB Controlled Timing(1,5)
NOTES:
1. R/
W or CE or UB & LB must be HIGH during all address transitions.
2. A write occurs during the overlap (tEW or tWP) of a LOW
UB or LB and a LOW CE and a LOW R/W for memory array writing cycle.
3. tWR is measured from the earlier of
CE or R/W (or SEM or R/W) going HIGH to the end-of-write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the
CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state.
6. Timing depends on which enable signal is asserted last,
CE, R/W, or byte control.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with Output Test Load
(Figure 2).
8. If
OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed
on the bus for the required tDW. If
OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the
specified tWP.
9. To access RAM,
CE = VIL, UB or LB = VIL, and SEM = VIH. To access semaphore, CE = VIH or UB & LB = VIH, and SEM = VIL. tEW must be met for either condition.
R/
W
tWC
tHZ
tAW
tWR
tAS
tWP
DATAOUT
(2)
tWZ
tDW
tDH
tOW
OE
ADDRESS
DATAIN
(6)
(4)
(7)
UB or LB
4089 drw 07
(9)
CE or SEM
(9)
(7)
(3)
4089 drw 08
tWC
tAS
tWR
tDW
tDH
ADDRESS
DATAIN
R/
W
tAW
tEW
UB or LB
(3)
(2)
(6)
CE or SEM
(9)
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