參數(shù)資料
型號: HY5V52CLF-6
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
封裝: 0.80 MM PITCH, FBGA-90
文件頁數(shù): 10/12頁
文件大?。?/td> 161K
代理商: HY5V52CLF-6
Rev. 0.7 / Dec. 2003
7
HY5V52CF
DC CHARACTERISTICS II (DC operating conditions unless otherwise noted)
Note :
1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY5V52CF-6/H/8/P/S
4.HY5V52CL:F-6/H/8/P/S
Parameter
Symbol
Test Condition
speed
Unit
Note
-6
-H
-8
-P
S
Operating Current
IDD1
Burst length=1, One bank active
tRC
≥ tRC(min), IOL=0mA
250
240
220
mA
1
Precharge Standby
Current
in power down mode
IDD2P
CKE
≤ VIL(max), tCK = 10ns
4
mA
IDD2PS
CKE
≤ VIL(max), tCK =
2
Precharge Standby
Current
in non power down mode
IDD2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = 10ns
Input signals are changed one time during
2clks. All other pins
≥ VDD-0.2V or ≤ 0.2V
30
mA
IDD2NS
CKE
VIH(min), tCK =
Input signals are stable.
30
Active Standby Current
in power down mode
IDD3P
CKE
VIL(max), tCK = 10ns
10
mA
IDD3PS
CKE
VIL(max), tCK =
10
Active Standby Current
in non power down mode
IDD3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = 10ns
Input signals are changed one time during
2clks. All other pins
≥ VDD-0.2V or ≤ 0.2V
60
mA
IDD3NS
CKE
VIH(min), tCK =
Input signals are stable.
40
Burst Mode Operating
Current
IDD4
t
tCK
tCK(min), IOL=0mA
All banks active
CL=3
270
260
220
mA
1
CL=2
280
240
Auto Refresh Current
IDD5
tRC
tRC(min), All banks active
440
400
mA
2
Self Refresh Current
IDD6
CKE
0.2V
4
mA
3
1.6
4
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