參數(shù)資料
型號： HY57V641620HGLT-KI
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 4 Banks x 1M x 16Bit Synchronous DRAM
中文描述： 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
文件頁數(shù)： 7/12頁
文件大小： 145K
代理商： HY57V641620HGLT-KI
HY57V641620HG
Rev. 1.0/Jan. 02
7
AC CHARACTERISTICS I
(AC operating conditions unless otherwise noted)
Note :
1.Assume tR / tF (input rise and fall time ) is 1ns
2.Access times to be measured with input signals of 1v/ns edge rate
Parameter
Symbol
-5I
-55I
-6I
-7I
-KI
-HI
-8I
-PI
-SI
Unit
Note
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
System clock
cycle time
CAS Latency =
3
tCK3
5
1000
5.5
1000
6
100
0
7
1000
7.5
1000
7.5
1000
8
1000
10
1000
10
1000
ns
CAS Latency =
2
tCK2
10
10
10
10
7.5
10
10
10
12
ns
Clock high pulse width
tCHW
1.75
-
2
-
2
-
2.5
-
2.5
-
2.5
-
3
-
3
-
3
-
ns
1
Clock low pulse width
tCLW
1.75
-
2
-
2
-
2.5
-
2.5
-
2.5
-
3
-
3
-
3
-
ns
1
Access time
from clock
CAS Latency =
3
tAC3
-
4.5
-
5
-
5.4
-
5.4
-
5.4
5.4
-
6
6
-
6
ns
2
CAS Latency =
2
tAC2
-
6
-
6
-
6
-
6
-
5.4
6
-
6
-
6
-
8
ns
Data-out hold time
tOH
2.0
-
2.0
-
2.0
-
2.0
-
2.0
-
2.0
-
2.0
-
2.0
-
2.0
-
ns
Data-Input setup time
tDS
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
ns
1
Data-Input hold time
tDH
0.8
-
0.8
-
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
ns
1
Address setup time
tAS
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
ns
1
Address hold time
tAH
0.8
-
0.8
-
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
ns
1
CKE setup time
tCKS
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
ns
1
CKE hold time
tCKH
0.8
-
0.8
-
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
ns
1
Command setup time
tCS
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
ns
1
Command hold time
tCH
0.8
-
0.8
-
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
ns
1
CLK to data output in low Z-time tOLZ
1
-
1
-
1
-
1.5
-
1.5
-
1.5
-
1
-
1
-
2
-
ns
CLK to data
output in high
Z-time
CAS Latency =
3
tOHZ3
5.4
5.4
5.4
5.4
5.4
5.4
3
6
6
6
ns
CAS Latency =
2
tOHZ2
3
6
ns
相關(guān)PDF資料
PDF描述
HY57V641620HGLT-PI Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance:+/- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
HY57V641620HGLT-SI CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
HY57V641620HGT-KI 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HGT-HI 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V643220CT-47 4 Banks x 512K x 32Bit Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY57V641620HGLT-P 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HGLT-PI 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HGLT-S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM
HY57V641620HGLT-SI 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HGT-5 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM
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