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參數(shù)資料
| 型號： | HY57V641620HGLT-KI |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Banks x 1M x 16Bit Synchronous DRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 145K |
| 代理商： | HY57V641620HGLT-KI |
HY57V641620HG
Rev. 1.0/Jan. 02
6
DC CHARACTERISTICS II
(TA= -40 to 85
°
C
, V
DD
=3.3
±
0.3V
Note5
, V
SS
=0V)
Note :
1.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V641620HGT-5I/55I/6I/7I/KI/HI/PI/SI
4.HY57V641620HGLT-5I/55I/6I/7I/KI/HI/PI/SI
Parameter
Symbol
Test Condition
Speed
Unit
Note
-5I
-55I
-6I
-7I
-KI
-HI
-8I
-PI
-SI
Operating Current
I
DD1
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
100
95
90
85
85
85
80
80
80
mA
1
Precharge Standby
Current
in Power Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
CK
= min
2
mA
I
DD2PS
CKE
≤
V
IL
(max), t
CK
=
∞
2
mA
Precharge Standby
Current
in Non Power Down Mode
I
DD2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time
during 2clks. All other pins
≥
V
DD
-
0.2V or
≤
0.2V
15
mA
I
DD2NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
12
mA
Active Standby Current
in Power Down Mode
I
DD3P
CKE
≤
V
IL
(max), t
CK
= min
6
mA
I
DD3PS
CKE
≤
V
IL
(max), t
CK
=
∞
5
mA
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time
during 2clks. All other pins
≥
V
DD
-
0.2V or
≤
0.2V
30
mA
I
DD3NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
20
mA
Burst Mode Operating
Current
I
DD4
t
CK
≥
t
CK
(min), I
OL
=0mA
All banks active
CL=3
170
160
150
150
150
150
120
120
120
mA
1
CL=2
NA
NA
NA
NA
120
mA
Auto Refresh Current
I
DD5
t
RRC
≥
t
RRC
(min), All banks active
160
mA
2
Self Refresh Current
I
DD6
CKE
≤
0.2V
1
mA
3
400
uA
4
相關PDF資料 |
PDF描述 |
|---|---|
| HY57V641620HGLT-PI | Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance:+/- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes |
| HY57V641620HGLT-SI | CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN |
| HY57V641620HGT-KI | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V641620HGT-HI | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V643220CT-47 | 4 Banks x 512K x 32Bit Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V641620HGLT-P | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V641620HGLT-PI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V641620HGLT-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V641620HGLT-SI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V641620HGT-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
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