參數(shù)資料
型號(hào): HM65W8512
廠商: Hitachi,Ltd.
英文描述: 4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k字 ×8位))
中文描述: 4個(gè)M移動(dòng)存儲(chǔ)芯片(512 KWord的× 8位)(4個(gè)M移動(dòng)存儲(chǔ)芯片(為512k字× 8位))
文件頁(yè)數(shù): 7/20頁(yè)
文件大?。?/td> 160K
代理商: HM65W8512
HM65W8512 Series
7
(4) Start the HM65W8512 operating by executing at least eight initial cycles (dummy cycles) at least 100
μ
s after the power voltage reaches 3.0 V-3.6 V after power-on.
Function Table
CE
OE
/
RFSH
WE
I/O pin
Mode
L
L
H
Dout
Read
L
X
L
High-Z
Write
L
H
H
High-Z
H
L
X
High-Z
Refresh
H
Note:
H
X
High-Z
Standby
X means H or L.
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Terminal voltage with respect to V
SS
Power dissipation
V
T
P
T
Topr
–0.5 to +6.0
V
1.0
W
Operating temperature
0 to +70
°
C
°
C
°
C
Storage temperature
Tstg
–55 to +125
Storage temperature under bias
Tbias
–10 to +85
Recommended DC Operating Conditions
(Ta = 0 to +70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
CC
V
SS
V
IH
V
IL
3.0
3.3
3.6
V
0
0
0
V
Input voltage
2.4
5.6
V
–0.5
0.8
V
1
Note:
1. V
IL
min = –1.2 V for pulse width 30 ns
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