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參數(shù)資料
| 型號： | HCMOS |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V |
| 中文描述： | HCMOS家庭特征 |
| 文件頁數(shù)： | 3/19頁 |
| 文件大?。?/td> | 87K |
| 代理商： | HCMOS |
March 1988
3
Philips Semiconductors
HCMOS family characteristics
FAMILY SPECIFICATIONS
RECOMMENDED OPERATING CONDITIONS FOR 74HCU
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Voltages are referenced to GND (ground = 0 V)
Note
1.
For analog switches, e.g. “4016”, “4051 series”, “4351 series”, “4066” and “4067”, the specified maximum operating
supply voltage is 11 V.
SYMBOL
PARAMETER
74HCU
UNIT CONDITIONS
min. typ. max.
V
CC
V
I
V
O
T
amb
T
amb
DC supply voltage
DC input voltage range
DC output voltage range
operating ambient temperature range
operating ambient temperature range
2.0
0
0
40
40
5.0
6.0
V
CC
V
CC
+
85
+
125
V
V
V
°
C
°
C
see DC and AC
CHAR. per device
SYMBOL
PARAMETER
MIN.
0.5
MAX.
+
7
20
20
UNIT
CONDITIONS
V
CC
±
I
IK
±
I
OK
±
I
O
DC supply voltage
DC input diode current
DC output diode current
DC output source or sink
current
standard outputs
bus driver outputs
DC V
CC
or GND current for
types with:
standard outputs
bus driver outputs
storage temperature range
power dissipation per package
V
mA
mA
for V
I
<
0.5 or V
I
>
V
CC
+
0.5 V
for V
O
<
0.5 or V
O
>
V
CC
+
0.5 V
for
0.5 V
<
V
O
<
V
CC
+
0.5 V
25
35
mA
mA
±
I
CC
;
±
I
GND
50
70
+
150
mA
mA
°
C
T
stg
P
tot
65
for temperature range:
40 to
+
125
°
C
74HC/HCT/HCU
above
+
70
°
C: derate linearly with 12 mW/K
above
+
70
°
C: derate linearly with 8 mW/K
plastic DIL
plastic mini-pack (SO)
750
500
mW
mW
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