參數(shù)資料
型號: HCMOS
廠商: NXP Semiconductors N.V.
英文描述: Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
中文描述: HCMOS家庭特征
文件頁數(shù): 13/19頁
文件大?。?/td> 87K
代理商: HCMOS
March 1988
13
Philips Semiconductors
HCMOS family characteristics
FAMILY SPECIFICATIONS
AC waveforms 74HCT
Test circuit for 74HCT
handbook, full pagewidth
MGK568
10%
90%
1.3 V
CLOCK
INPUT
3 V
GND
1.3 V
DATA
INPUT
3 V
GND
10%
tPLH
90%
1.3 V
OUTPUT
tsu
tPHL
tsu
tTLH
tTHL
1.3 V
SET,
RESET,
PRESET
INPUT
3 V
GND
tr
tf
tWH
th
th
tWL
trem
1/fmax
Fig.9
Set-up times, hold times, removal times, propagation delays and the maximum clock pulse frequency for
sequential logic ICs.
(1) In Fig.9 the active transition of the clock is going from LOW-to-HIGH and the active level of the forcing signals
(SET, RESET and PRESET) is HIGH. The actual direction of the transition of the clock input and the actual
active levels of the forcing signals are specified in the individual device data sheet.
(2) For AC measurements: t
r
= t
f
= 6 ns; when measuring f
max
, there is no constraint on t
r
, t
f
with 50% duty factor.
handbook, halfpage
MGK565
PULSE
GENERATOR
D.U.T
VCC
VI
VO
RT
CL
50 pF
C
L
=
load capacitance including jig and probe capacitance (see AC
CHARACTERISTICS for values).
R
T
=
termination resistance should be equal to the output impedance Z
o
of
the pulse generator.
Fig.10 Test circuit.
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