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參數(shù)資料
| 型號： | HB52E649E12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| 中文描述： | 注冊使用512 MB SDRAM的內(nèi)存（512 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 16/18頁 |
| 文件大小： | 541K |
| 代理商： | HB52E649E12 |
HB52E649E12-A6B/B6B
16
Physical outline
Cautions
1.
Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copy-
right, trademark, or other intellectual property rights for information contained in this document. Hitachi
bears no responsibility for problems that may arise with third party’s rights, including intellectual property
rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have re-
ceived the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, con-
tact Hitachi’s sales office before using the product in an application that demands especially high quality
and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily
6.35
0.250
2.00
±
0.10
0.079
±
0.004
6.35
0.250
4.175
0.164
2.00
±
0.10
0.079
±
0.004
1.00
0.039
Detail B
Detail C
Detail A
0
±
2
±
0
±
0
±
3
±
3
±
0
±
0
±
1.27
0.050
3.00 typ
0.118 typ
133.37– 0.15
+ 0.024
– 0.006
(75.113)
(2.957)
5.251
3
±
0
±
11.43
0.450
36.83
1.450
54.61
2.150
(63.67)
(2.51)
(29.119)
(1.146)
A
B
C
1
84
Front side
Back side
8
4
±
0
0
±
1
0
3
1
4
1
1
2 –
φ
3.00
±
0.10
2 –
φ
0.118
±
0.003
1.00
±
0.05
0.039
±
0.002
Note: Tolerance on all dimensions
±
0.15/0.006 unless otherwise specified.
(DATUM -A-)
(DATUM -A-)
Unit: mm
(DATUM -A-)
R FULL
R FULL
127.35
±
0.15
5.014
±
0.006
Component area
(Front)
Component area
(Back)
1.27
±
0.10
0.050
±
0.004
4
0
4.00 max
0.157 max
133.37
±
0.15
5.251
±
0.006
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52F169E1 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52F649E1 | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| HB52F649E1-75B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| HB52F649E1 | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| HB52F88EM | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E649E12-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649EN-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E649EN-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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