參數(shù)資料
型號(hào): HB52F649E1
廠商: Hitachi,Ltd.
英文描述: 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
中文描述: 注冊(cè)使用512 MB SDRAM的內(nèi)存(512 MB的寄存同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 1/21頁(yè)
文件大?。?/td> 163K
代理商: HB52F649E1
Preliminary: The Specifications of this device are subject to change without notice. Please contact to your nearest
Hitachi’s sales Dept. regarding specifications.
HB52F649E1-75B
512 MB Registered SDRAM DIMM
64-Mword
×
72-bit, 133 MHz Memory Bus, 1-Bank Module
(18 pcs of 64 M
×
4 Components)
PC133SDRAM
ADE-203-1080 (Z)
Preliminary
Rev. 0.0
Jun. 28, 1999
Description
The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed
as an optimized main memory solution for 8-byte processor applications. The HB52F649E1 is a 64M
×
72
×
1-bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 256-Mbit SDRAM
(HM5225405BTT) sealed in TSOP package, 1 piece of PLL clock driver, 3 pieces of register driver and 1
piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the HB52F649E1 is 168-pin socket
type package (dual lead out). Therefore, the HB52F649E1 makes high density mounting possible without
surface mount technology. The HB52F649E1 provides common data inputs and outputs. Decoupling
capacitors are mounted beside each TSOP on the module board.
Features
Fully compatible with : JEDEC standard outline 8-byte DIMM
168-pin socket type package (dual lead out)
Outline: 133.35 mm (Length)
×
43.18 mm (Height)
×
4.00 mm (Thickness)
Lead pitch: 1.27 mm
3.3 V power supply
Clock frequency: 133 MHz (max)
LVTTL interface
Data bus width:
×
72 ECC
Single pulsed
RAS
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
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